Abstract
The hydrogenated amorphous silicon and hydrogenated amorphous silicon-gemanium alloys have been prepared by the PECVD method. Hydrogenated amorphous thin film solar cells consisted of P-a-Si:H/I-a-Si:H(a-Si:H, a-SiGe:H, a-Si:H/a-SiGe:H superlattice) / N-a-Si:H structure. Solar cells were fabricated with thickness 200 nm of intrinsic layer, while the thicknesses of p- and n-layer were fixed to 30 nm and 60 nm respectively. UV-Vis Spectrometer analysis of a-Si:H and a-SiGe:H thin films optical bandgap were 1.77, 1.12–1.71 eV. Conversion efficiencies were a-Si:H (1.36%), a-SiGe:H (3.11%) and a-Si:H/a-SiGe:H superlattice (4.52%).
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