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Abstract
a-Si:H films are produced under various substrate temperatures and at different compositions of a gaseous mixture. Their IR spectra, dark conductivity, photoconductivity, photosensitivity, and conductivity activation energy are studied. It has been shown that one can produce specimens marked by low conductivity activation energy and high photosensitivity by varying the substrate temperature and gaseous mixture composition. These specimens are more stable as compared to a-Si:H films produced under a low substrate temperature.
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