Abstract
This paper reports the results of a study of the volt-amp characteristics over a broad temperature range (+200 to −100) ° C of metal-semiconductor-metal structures based on glasses in the V2O5-TeO2 system and on a V2O5 polycrystalline aggregate. The electrically formed specimens have symmetrical volt-amp characteristics with an S-type negative resistance region. The temperature dependence of the volt-amp characteristics for these specimens is different from that observed in unformed structures. It is suggested that during forming there is the precipitation of crystalline grains of VO2 in the interelectrode region and these undergo a phase change which results in the behavioral differences between the formed and unformed specimens.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
