Abstract
Thin foils of gold, copper and nickel, prepared for examination in the electron microscope, were bombarded on one surface with a beam of 100 eV singly charged argon ions at normal incidence and were then examined. Dislocation loops were produced near the bombarded surface and it is demonstrated that they are formed by the agglomeration of interstitial point defects. It is suggested that these point defects are injected to a depth in the foil by replacement collision sequences initiated at the surface, and that they subsequently cluster to form dislocation loops. The effect of the temperature of the specimen during bombardment on the damage observed in copper and gold suggests that the point defects that form the damage migrate in the temperature range around 0° C, i.e. the range normally associated with stage III resistivity annealing in these metals.
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