Abstract
A process is described for the growth of sapphire crystals in a ribbon geometry by the Edge-defined Film-fed Growth (EFG) technique. The ribbon shaped crystals are grown for use as substrates for heteroepitaxial silicon. The apparatus, growth process, and characteristics of the grown ribbon are described. Three ribbons, 75 mm in width, are grown simultaneously. The growth rate is between 152 and 204 mm/h. A high percentage of the ribbons are free of off-oriented grains. The main defect features are “sheet” microvoids typically 5–25 μm in diameter, and “distributed” microvoids typically 0.5–2 μm in diameter. No significant difference is observed in devices fabricated in the heteroepitaxial silicon deposited on EFG and Czochralski grown substrates.
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