Abstract
We report on the production rate of the neutral 〈001〉-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110–350K with 2MeV electrons and a beam flux of 7.5×1013 electrons cm−2s−1. On annealing at ∼700K, we find that the neutral 〈001〉-split self-interstitial (R2) defect is mobile and anneals out with an associated energy of 1.6(2)eV and some loss of neutral vacancies. A significantly reduced production rate of R2 in the temperature interval 110–350K is suggestive of a radiation enhanced annealing process.
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