Abstract
Abstract The rate of damage formation, the spectrum of energy levels and the annealing results on n- and p-type Ge irradiated by 660 MeV protons were studied and compared to similar results on γ-irradiated samples. Reverse annealing (and defect creation) is found upon the decay of disordered regions. The formation upon annealing of complexes with impurities is also deduced.
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