Abstract
AbstractThe results of electron microscopic and electron diffraction investigation of the surface during annealing of single‐crystal AIIBVI (CdS, CdSe, ZnSe, ZnS) films in the presence of oxygen are reported.It is shown that the behaviour of islands of cadmium oxide formed by chemical interaction between O2 and the CdS, CdSe substrate in the process of growth resembles that of the nuclei in film condensation. CdO films become “continuous” more quickly, if the size of blocks of substrate‐epitaxial AIIBVI film is larger. Epitaxial ZnO films formed on the surface of epitaxial ZnS and ZnSe layers are of a wurtzite structure or a cubic structure with the parameter a = 4.5 Å.
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