Abstract
The purpose of this paper is to review the preparation and characterization of thin films of silicon nitride deposited by the technique of plasma-enhanced chemical vapor deposition. The applications of silicon nitride thin films in integrated circuit technology are also reviewed. The paper also introduces the modifications to the plasma chemical vapor deposition system used to avoid plasma bombardment of the substrate and to reduce hydrogen incorporation in the layers in the form of Si-H and N-H bonds. The effect on film properties of post-deposition annealing at a temperature higher than the deposition temperature is reported.
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