Abstract
This paper describes the preparation process of plasma-nitridedAlNx barriersfor NbN Josephson junctions and the electrical characteristics of the junctions. The plasma-nitridedAlNx barrier is a candidate for the realization of an ultra-thin and homogeneousbarrier layer which is needed to enhance the quality of NbN/AlN/NbNx /NbN junctions. In this work, we have investigated the preparation conditions of plasma-nitridedAlNx barriers by evaluating the electrical characteristics of NbN/AlNx /NbN junctions. By adjusting the Al thickness and nitridation time, we obtained junctions withgood superconductor/insulator/superconductor characteristics at 4.2 K with a quality parameterVm as high as 104 mV and a critical current densityJc as high as 8 kA cm−2. Evaluation of the spreadin Ic showed that theminimum to maximum Ic spread was about ± 3% in a series of 100 junctions with an area of 100 µm2.
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