Abstract
Transparent conductive ZnO: Al films were prepared by the facing-target-type sputtering method. The films typically showed poor conductivity immediately after sputtering. However, at optimum conditions, they manifested their lowest resistivity of 4×10 -4 Ω cm after heat treatment at 400°C. The decrease in resistivity is mainly attributed to the improvement of the Hall mobility which in essence is not due to crystallinity improvement, but rather due to the decrease of excess oxygen atoms at the interstitial state or the grain boundaries. However, even without heat treatment we obtained a low resistivity of 5.3×10 -4 Ω cm under low oxidation sputtering condition at 0.1 Pa with oxygen to argon ration of 1:4.
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