Abstract
It is shown that transmission electron microscope specimens prepared from compound semiconductors by conventional argon ion milling may contain serious artefactual strucutures. The nature of these artefacts is characterised and correlated in detail with specific features of the ion milling process. Results obtained using argon ion milling, for a number of semiconducting materials over a range of milling conditions, are compared with those obtained using alternative ion species. These comparative results demonstrate the great improvement in specimen structural quality which may be achieved by combining a logical selection of ion species with a careful choice of ion milling conditions. Full information is given on specific processes for producing thin specimens of high structural quality from a wide range of compound semiconductors.
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