Abstract
The impurity gettering efficiency of the polysilicon film significantly hinders the out diffusion of Cu in the heavily boron-doped mono-silicon substrate. Moreover, as the thickness and layer count of the polysilicon film increase, its gettering effectiveness is further enhanced.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
