Abstract
The growth of LPE films 3.8 cm in diameter has been achieved under conditions which lead to a high yield of defect free material suitable for bubble domain circuits. Temperature control to ±0.1°C, larger melt volumes, more precise timing of runs and an increase in saturation temperature of the melt to 970°C all contribute to the improved quality. The change to 970°C also sharply reduces platinum attack. Films having a collapse field controlled to ±1 Oe can be grown in yields exceeding 35%.
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