Abstract
ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al<sub>2</sub>O<sub>3</sub> (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10<sup>-3</sup> Ω • cm.
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