The Preparation and Characteristics Analysis of ZnO/Ni/ZnO Schottky Junction TFTs

Abstract

Using radio frequency magnetron sputtering deposition deposit ZnO films on SiO2glass, and prepare vertical structure ZnO-based thin film transistor. By means of measurement, obtain the static output characteristics, the output current can achieve the order of milliampere, get the transfer characteristics of ZnO TFTs; transconductance which get the largest value gm=0.0061S when source-drain voltage VDS=3V, source-gate VGS=0.4V; output resistance and voltage amplification coefficient, the smallest voltage amplification factor is μ=1.16056,still have voltage amplification effect.