Abstract
The limits of submicron patterning by optical lithography were estimated by computer simulation. As a result, the optimum numerical aperture, NA, which gives the highest resolution was determined. Assuming that the permitted defocus value is +1 pm, the lithographic resolution of about 0.7 pm was obtained with NA 0.5 and near-UV exposure. A 0.5-μm resolution was obtained with NA:0.35 and deep-UV exposure. In addition, less than 0.5-μm resolution was suggested using resist system technologies and optical exposure tools that optimize NA as well as the exposure wavelength. Furthermore, it is shown that the goal of half micron resolution will be industrially achieved before the end of 1980's by optical lithography rather than by electron-beam lithography.
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