Abstract
The metal oxide semiconductor-based p-n heterojunctions have captured intense attention in electronic and optoelectronic industry thanks to their simple and low-cost production and superior performance. Among these metal oxide semiconductors, ZnO, SnO2 and TiO2 have a broad usage as main component for the fabrication of heterojunction-based electronic devices, such as diodes, photodiodes, photodetectors, sensors and solar cells. However, the investigations towards the in-depth understanding of transport mechanism of n-SnO2/p-Si heterojunction are scarce. Herein, electrical transport characteristics of n-SnO2/p-Si heterojunction diode fabricated using a hydrothermal method are investigated. The device exhibits an excellent rectifying behavior quantified by a rectification ratio of 4754 ± 50 and a turn-on voltage at around 3.89 ± 0.05 V. Based on the characteristic measurements, the values of built-in potential, valence and conduction band offsets are estimated to be 0.65 ± 0.03 V, 3.24 eV and 0.48 eV, respectively. Ultimately, the energy-band alignment of the device is elaborated to explain the basic understanding of its working principle. This study provides a guidance to interpret the carrier transport mechanism within the device.
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