Abstract
In the present work we have investigated the influence of the post-annealing environment on the photoluminescence (PL) recovery of Si nanocrystals after ion irradiation. Samples originally produced by Si implantation into SiO2 matrix at 600°C post-annealed at 1100°C were further bombarded with 2MeV Si+, at a fluence of Φ=2×1013Si/cm2. After irradiation the original emission, composed by two PL bands, was completely quenched. We shown that the environment of a post-annealing performed at 900°C has a strong effect on the PL emission recovery. The intensity and shape of the PL spectra have revealed to be dependent of the annealing gas (N2 or Ar), annealing time, as well as the original Si excess. The results are explained on the basis of current theories.
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