Abstract

We report the post-annealing effect on the pinning properties of GdBa 2 Cu 3 O 7-δ (GdBCO) coated conductors (CCs) fabricated by a reactive co-evaporation deposition and reaction process. The GdBCO CCs annealed at 750 °C in the PO 2 of 300 mtorr for 15 min show the most enhanced critical current densities (J c ) for B//c due to the stacking faults (SF) piled up along the c-axis. The minimum J c values of post-annealed samples in relatively higher fields such as 5 T at 77 K and 7 T at 65 K were larger than those of pristine sample; although their minimum J c values were lower in relatively lower fields such as 1 T at 77 K and 3 T at 65 K. In-field J c values for B//ab were closely related to the density of SFs within samples. Analysis results by transmission electron microscopy revealed that the SF density was remarkably reduced after the post-annealing process, which is responsible for enhanced minimum J c values and significantly degraded J c values for B//ab in relatively higher fields.

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