Abstract
AbstractIn this study, we have calculated the donor impurity binding energy, donor impurity related photoionization cross‐section and polarizability in symmetric GaAs/Ga1–x Alx As quantum well‐wire as a function of the impurity positions, dimensions of the structures and external electric and magnetic field, the calculations were performed within the effective mass approximation, using a variational method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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