Abstract
Microelectronic fabrication requires the repeated use of etching processes in a variety of materials to delineate fine-scale circuit features with submicrometer dimensions. Plasma-assisted etching combines chemical etching by reactive neutral gas phase species with bombardment by charged plasma ions to form volatile final etch products. This ion-neutral interaction makes possible highly directional etching in semiconductors, metals, polymers, and dielectrics, with satisfactory etch rates and process yields.
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