Abstract
The experimental investigations of the directed deformation influence on the electroconductance of p-T1InSe 2 single crystals have been carried out. The presence of a strong piezoresistive effect has been found at p-T1InSe 2 crystal tension or compression along the crystallographic axis [001]. It is shown that the observed effect has a qualitative explanation, based on a 4-ellipsoidal model with the more probable arrangements of extrema being at Г, T, and N points of the Brillouin band.
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