Abstract
The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are identified and additionally a set of new symmetries is observed. At low temperature a 23×23 pattern is observed which changes to the (2×2) pattern at high temperature. In contrast to the GaSb(111)A surface the observed 23×23 structure is not stabilized by configurational entropy.
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