Abstract
Titanium dioxide thin films were deposited on thermally oxidized silicon wafers by metal organic CVD (MOCVD). Then the resulting TiO2/SiO2/Si test structures were annealed in dry oxygen for 60min at temperatures 700, 800, 900, and 1000°C, respectively. Refractive index and relative permittivity of the as-deposited and annealed titanium dioxide layers were investigated by spectral ellipsometry and high frequency capacitance–voltage (HF-CV) measurements. The pH-sensing properties of the titanium dioxide layers were investigated by capacitance–voltage measurements on electrolyte/insulator/silicon (EIS) structures. In addition, light-induced drift of the test structures was investigated by illumination using 12V light bulb for 60min in a measurement chamber. The titanium dioxide layers revealed refractive index of 2.38–2.58 (λ=550nm) and relative permittivity of 31.28–36.27. Integral pH-sensitivities (pH ranging from 3 to 11) of the titanium dioxide layers were 57.4–62.3mV/pH (T=32°C). All the titanium dioxide layers showed no light-induced drift. After long-term measurement, the titanium dioxide layer annealed at 900°C revealed a better stability of the pH-sensing properties than other titanium dioxide layers investigated in this study.
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