Abstract
In this study, Aniline Blue (AB) synthetic triarylmethane dye and AB:Au NPs mixture films were deposited on n-Si by spin coating technique to form an organic/inorganic hybrid electro-optic device. Thus, Co/AB/n-Si (named D1) and Co/AB:Au NPs (1%)/n-Si (named D2) photoactive devices were fabricated, and current-voltage (I–V) measurements were performed on both devices to investigate electrical properties under dark and various light illumination intensities changes from 100 to 400 mW/cm2. Sensitivity and responsivity as well as specific detectivity of both devices were obtained depending on the reverse bias voltage for various light intensities. The main device parameters such as ideality factor (n), barrier height (Фb), series resistance (Rs) and experimental interface states density (Nss) were calculated and discussed in details. The light intensity-dependent I–V measurements revealed that the reverse bias current increased with the increasing of the light intensity and confirmed photodiode behaviors. The illumination coefficient (m) values were also extracted from the light-intensity dependent I–V characteristics and obtained as 0.87 and 1.28 for D1 and D2, respectively. Furthermore, the D2 device exhibited a higher response to the light than D1 due to the surface plasmon resonance effect of Au NPs. The capacitance-voltage (C–V) and conductance-voltage (G-V) characteristics of both devices were also studied in details under dark at 500 kHz applied frequency. As a result, the experimental results highlight that the D1 and D2 devices can be used in various optical applications such as photodiodes, photodetector and carrier storage devices.
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