Abstract

The effect of light bias on the spectral current response and spectral capacitance characteristics of CdS/CuInSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thin-film heterojunction solar cells has been investigated. Monochromatic light bias has been used to identify specific wavelength regions responsible for the spectral behavior seen under white light bias. Variations with light or voltage bias are consistent with the effect of the field on interface recombination in both high and low CdS resistivity devices. Devices with high CdS resistivity show spectrally dependent enhancement and quenching effects very similar to those reported for CdS/Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> S devices in which the space charge region was primarily in the CdS. It is concluded that in high CdS resistivity devices the junction behavior is controlled by the photoconductive CdS as has been established in CdS/Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> S cells. Low CdS resistivity CdS/CuInSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> devices show none of these effects.

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