The photonic and luminescence characteristics of the lasing NdxGa1-xAs quantum dots prepared via N-diphenyl-N-bis3-methylphenyl-1-biphenyl-4-diamine assisted colloidal approach

Abstract

Here, we report the photonic and luminescence characteristics of the lasing NdxGa1-xAs quantum dots prepared via N-diphenyl-N-bis3-methylphenyl-1-biphenyl-4-diamine assisted colloidal approach for laser diode potential application. The prepared NdxGa1-xAs quantum dots showed cubic crystal structure as evidenced from XRD. The optical behavior showed a redshift of the absorbance and emission spectra, and a decrease of the optical bandgap from 2.4 eV to 1.82 eV. The Nd-atomic dopant raised the emission spectral intensity and reduced the bandwidth of the emitted light. The Nd-dopants suppress the surface defects of the GaAs nanocrystals and creates populating levels within the GaAs bandgap. The NdxGa1-xAs quantum dots exhibited quantum yield of 91 %. Therefore, the NdxGa1-xAs nanocrystal quantum dots most probably employed as efficient lasing materials for optical amplifier and laser diodes applications.