Abstract
Optical absorption and Hall data for In-doped-Si crystals have been used to determine the photo-ionization cross-section σ I ( hυ). The spectral dependence accords with prior reports, and with simple deep impurity models. However, we find a maximum σ I of 3.3 × 10 -17 cm 2, several times smaller than previous estimates, thus removing the need for a large effective-field correction.
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