Abstract
In quantum dot structures, photoionization has been considered as an optical transition from the impurity ground state to the conduction subbands. Using a variational approach, we have calculated the photon energy dependence of the photoionization cross-section for a hydrogenic donor impurity in an infinite barrier GaAs quantum dot as a function of the sizes of the dot and the impurity position. The results we have obtained show that the photoionization cross-section is strongly affected by the quantum size effects and the position of the impurity and its overall shape seems to be a signature of the quantum dot system.
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