Abstract
Resonant tunneling structures show negative differential resistance and enables many unique applications. Most researches have focused on structures with one or two barriers. In this paper, a three-barrier, two-well resonant tunneling structure integrated with a 1.2-µm-thick n-type GaAs layer are investigated numerically. The results show that the coupling between the energy level in the incident well and that in the central quantum well is the key point in understanding the origin of the current–voltage multi-peak at reverse bias. A photoinduced voltage shift manifests that the 1.2-µm-thick, slightly doped n-GaAs layer plays an important role in enhancing photoelectric sensitivity.
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