Abstract
The dependences of photo-emf of metal-insular-semiconductor structures based on n-Hg1–xCdxTe (x = 0.21–0.23) on bias voltage, frequency, and temperature are experimentally studied. The photoelectrical characteristics of the metal-insulator-semiconductor structures based on epitaxial n-Hg1–xCdxTe (x = 0.21–0.23), including those taking into account the presence of near-surface graded-gap layers having an increased content of CdTe at various temperatures are calculated. The calculated dependences are compared with experiment and it is shown that the differential resistance of the spatial charge region for the metal-insulatorsemiconductor structures based on n-Hg1–xCdxTe (x = 0.21–0.23) without a graded-gap layer is restricted by tunneling through deep levels, whereas the differential resistance of the same structures with graded-gap layers – by the charge-carrier diffusion.
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