Abstract
In this work, the photoelectric response properties of the graphene/GeSi QDs hybrid structure were demonstrated by measuring the I–V curve, and the incident photon-to-current conversion efficiency (IPCE). The maximal on–off ratio of the current value reaches 1500 at 10 K, due to the competition between the carrier freeze-out effect and the recombination center effect. The IPCE of the hybrid structure under different incident light indicated that the photoelectric response of hybrid structure is most sensitive to the ultraviolet light (325 nm), which is attributed to the enhanced ultraviolet absorption of graphene surface plasmon in the hybrid structure. Hence, our results represent that the graphene/GeSi QDs hybrid structure has potential application as a novel ultraviolet photoelectric device.
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