Abstract
We experimentally studied the photocurrent of AlAs/GaAs/AlAs double barrier resonant tunneling diode (RTD), which is composed of an InAs layer of self-assembled quantum-dots (QDs) on top of the AlAs barrier layer. It is found that the charging InAs quantum dots can effectively modulate the carrier transport properties of the RTD. Moreover, we also found that the resonant tunneling current through a single energy level of an individual quantum dot is extremely sensitive to the photo-excited holes bound nearby the dot, and the presence of the holes lowers the electrostatic energy of the quantum dot state. In addition, it is also observed that the photocurrent can increase step by step with the individual photon pulse excitation when the illumination is low enough. The experiment results well demonstrated the quantum amplified characteristics of the device.
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