Abstract
A Fe2O3 wrapped CuFeO2 layer structure was fabricated on ITO glass by electrophoretic deposition and sol-gel methods at 400 °C. Such low fabrication temperature avoids the damage of ITO glass’s transparency and conductivity. The FeCl3 gel penetrated through the CuFeO2 layer enhanced the connection and conductivity between CuFeO2 particles and CuFeO2/ITO glass interface. Pt particles were decorated on the surface by a photoreduction method to improve the PEC performance. The inserted Fe2O3 thin layer between the CuFeO2 layer and Pt particles also worked as a buffer layer, which removed the upward barrier at the interface and improved the PEC activity.
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