Abstract
We evaluated the transmittance and the sensitivity of the chemically amplified (CA) resist including various kind of photo acid generator (PAG) to clarify cause-and-effect relationship between the photo-absorption of PAG and the sensitivity under extreme ultraviolet (EUV) exposure. Transmission measurements and sensitivity measurements were carried out at the BL10 and BL3 beamlines in NewSUBARU synchrotron radiation facility. It is confirmed that increasing the atomic absorption cross section of an anion of PAG is effective in improving the sensitivity of the CA resist in EUVL.
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