Abstract
We have used phonon imaging to study the drag current induced by non-equilibrium acoustic phonons in a low-mobility n-type Gallium Nitride epilayer. Current densities up to j=4.7×10 3 A/m 2 were induced by transverse acoustic phonon drag of electrons in the structure. We also carried out numerical calculations of the phonon-drag current including the effects of phonon focussing in the sapphire substrate, acoustic anisotropy in the GaN and acoustic mismatch between the two materials. We show that the theory is able to account for the qualitative features of the drag image as well as the magnitude of the phonon-drag-induced current.
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