Abstract
The variation of photoconductivity with temperature and long-term photorelaxation under weak and moderate illuminations in polycrystalline InSe thin films are studied. Different decay characteristics are determined and it is found that separate barriers are responsible for drift and recombination. The long-term photodecay is found to be exponential with time for weak illumination. The photosensitivity of the films is also determined and its variation with temperature is studied.
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