Abstract
CuInSe2 with chalcopyrite structure has become one of the most promising photoelectric materials for its high optical absorption coefficient and conversion efficiency. Electrodeposition has the advantages of low cost and easy operation. CuInSe2 thin films were prepared by one-step electrodeposition with CuC12·2H2O, InC13, SeO2 as raw materials. Cyclic voltammetry curves of the solutions were tested by electrochemical workstation. The phases of product thin films were analyzed by X-ray diffraction (XRD) and the surface morphology was characterized by scanning electron microscope (SEM). Experimental results show that the continuous, uniform and dense CuInSe2 thin films can be obtained under conditions of deposition potential -0.5 V and sodium citrate as complexing agent with concentration of 5mmol/L. The XRD diffraction peaks of CuInSe2 thin film are corresponding to the crystal planes of (112), (220) and (312) respectively.DOI: http://dx.doi.org/10.5755/j01.ms.23.4.17447
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