Abstract
CuInSe2 with chalcopyrite structure has become one of the most promising photoelectric materials for its high optical absorption coefficient and conversion efficiency. Electrodeposition has the advantages of low cost and easy operation. CuInSe2 thin films were prepared by one-step electrodeposition with CuC12·2H2O, InC13, SeO2 as raw materials. Cyclic voltammetry curves of the solutions were tested by electrochemical workstation. The phases of product thin films were analyzed by X-ray diffraction (XRD) and the surface morphology was characterized by scanning electron microscope (SEM). Experimental results show that the continuous, uniform and dense CuInSe2 thin films can be obtained under conditions of deposition potential -0.5 V and sodium citrate as complexing agent with concentration of 5mmol/L. The XRD diffraction peaks of CuInSe2 thin film are corresponding to the crystal planes of (112), (220) and (312) respectively.DOI: http://dx.doi.org/10.5755/j01.ms.23.4.17447
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
