Abstract
The pH-sensing properties of tantalum pentoxide deposited by metal organic CVD and the influence of annealing in dry oxygen between 500 and 900°C on pH sensitivity, hysteresis, and light response has been studied. The samples were characterized by capacitance–voltage measurements of EIS structures. The results obtained showed an optimal annealing temperature of 600°C for which the pH sensitivity reaches 58 mV pH −1 with a hysteresis of less than 1 mV. Using this annealing temperature, the voltage shift of the sensor signal caused by light-induced drift of the tantalum pentoxide is significantly reduced compared to the as deposited sample. Light-induced drift of the sensor signal can be minimized by using polycrystalline layers obtained at an annealing temperature of 900°C. The pH sensitivity of these polycrystalline layers however is reduced to 54 mV pH −1 and hysteresis is increased compared to tantalum pentoxide annealed at 600°C.
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