Abstract

Abstract Ferroelectric 0.4Pb(Yb 1/2 Nb 1/2 )O 3 –0.6PbTiO 3 (PYNT) thin film was prepared on Pt/Ti/SiO 2 /Si(100) substrates by multi-target rf magnetron sputtering deposition at substrate temperature of 550 o C. The YbNbO 4 oxide target was used as Yb and Nb sources. The effect of composition and substrate was investigated by X-ray diffraction analysis. Although the formation of perovskite phase mainly depends on the Pb sputtering power, the processing window is very narrow on Pt/Ti/SiO 2 /Si substrate. The substrates with the thick Pt electrodes tend to reduce the perovskite phase. Meanwhile, the TiO 2 buffer layer deposited on the Pt surface is observed to enhance the formation of the perovskite phase.

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