Abstract
In this study, the photodiode and diode characterizations of Al/n-ZnO/p type Si heterostructure have been investigated with current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. ZnO thin film has been deposited on p type Si by using atomic layer deposition technique. Some photodiode and diode parameters such as open circuit voltage (Voc), short circuit current (Isc), power efficiency(ηP), fill factor (FF), ideality factor (n) and barrier height (Φb) have calculated with I–V and C–V characteristics. Voc and Isc was found to be 0.094 V and 0.24 mA, respectively at 50 mW/cm2. n and Φb have been calculated 0.41 eV and 2.36, respectively. Especially, Negative capacitance has explained in the forward bias regions at room temperature and in dark condition. The C–V characterization of the Al/ZnO/p type Si heterostructure has been investigated under illumination condition. It can be said that the capacitance of device has been affected under illumination condition.
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