The peculiarity of capacitance-voltage characteristics of the metal-insulator-nanowire structure

Abstract

The quasi-static capacitance-voltage characteristics of the metal-insulator-nanowire structure have been theoretically studied with account of the surface states at the nanowire-insulator interface. At small radii, possible is the case when the entire bulk of nanowire is depleted before the onset of inversion of the conduction type near the surface will occur. In this case, there is a strong deviation of the capacitance-voltage characteristic from that in the standard MIS structure: with increasing voltage, the capacitance of the structure tends not to a constant value equal to the capacitance of the dielectric layer, but to zero.