Abstract
SnS semiconductor is currently a potential material for solar cell application. However, this technology has not been able to overcome the efficiency barrier of 5%, being necessary a complete understanding of the limiting factors. In this work, the analysis of the impact of recombination mechanisms namely radiative and non-radiative due to defects at bulk and SnS/CdS interface on the J-V characteristics of SnS/CdS solar cell performed by SCAPS software is presented and discussed in detail for the first time. Additionally, the impact of SnS and CdS layers thickness, series and shunt resistances, the density of defects at SnS bulk material, the density of defects at the interface as well as the concentration of acceptors were studied. Conditions that optimize device performance were also presented. It is demonstrated that the optimization of the device can result in an efficiency promotion from 2.03% to 14.7%.
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