Abstract
There is considerable interest in the use of ruthenium as an ultrathin trench liner in damascene copper plating used to fabricate on-chip interconnects. The problem is that when freshly deposited ruthenium films are exposed to air, their surfaces tend to undergo spontaneous oxidation, and such deposits (as demonstrated here) are reluctant to undergo reduction. Copper deposition in an acid plating bath occurs readily on the oxidized ruthenium, but the presence of oxide is known to have a detrimental effect both on the copper superfilling process and copper adhesion at the Ru/Cu interface.
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