Abstract
The effect of TiN grain size and content on the mechanism and kinetics of high-temperature (up to 1500°C) oxidation of hot pressed silicon nitride (HPSN) was studied in air under isothermal and non-isothermal conditions. Analysis of oxidation products revealed the formation of rutile in the temperature range from 600 to 1000°C and also α-cristobalite, β-Y 2Si 2O 7, yttrialite, mullite and Y 2Ti 2O 7 at higher temperatures. The oxidation of Si 3N 4-TiN composites shows different behaviour depending on the temperature. The presence of fine isolated inclusions of TiN (<30 mass %) in the silicon nitride matrix does not change the mass gain during oxidation or increases it only slightly, as compared with a TiN-free material. For materials containing a continuous skeleton of TiN (>30 mass %) a noticeable increase of the oxidation rate was observed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
