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Abstract
Thin copper films of about 50 nm thickness were deposited on glass substrates under ultrahigh vacuum conditions and exposed to oxygen at 105°C and various oxygen pressures (0.1–12 Pa). The kinetics of the oxidation process was studied in situ by ellipsometry ( λ = 1152 nm). A layer growth of the Cu 2O oxide phase was observed. The quantitative evaluation led to the conclusion that a linear time law is valid. The important role of adsorbed molecular oxygen species for the reaction velocity became obvious from the pressure dependence of the rate constant.
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