Abstract
The origin of aging of Al–SiO2–Si tunnel diodes is investigated. A theoretical model is proposed based on the assumption that aluminum undergoes a chemical reaction with the SiO2 layer and produces silicon which introduces active centers for trapping electrons in the oxide layer. The model shows that the negative charge density that develops at the interface is responsible for the time dependence of the barrier height observed in Al–SiO2–Si tunnel devices.
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