Abstract
The <111>-oriented whiskers of β-SiC were studied by field emission and field ion microscopes. Field emission patterns of the A [111]- and B [1̄1̄1̄]-oriented tips were very different from each other, and showed a close resemblance to the pair of patterns obtained by Arther for GaAs. The assignment of each emission pattern of SiC to the A- or B-orientation was made possible with the help of this comparison. Oxygen adsorption properties of these tips were not substantially different. A distinct difference between the two orientations was also found in the hydrogen ion patterns imaged at relatively high fields. An interpretation of this difference was rendered possible with the model of Knor and Müller.
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