The optimum solidification and crucible rotation in silicon czochralski crystal growth

Abstract

Silicon crystallization is very important in many industrial processes, and it is desirable that maker should have a low cost manufacturing and high efficiency for producing semiconductors. One semiconductor process is the Czochralski (CZ) silicon melt flow and this CZ process has an excellent manufacturing feature and is utilized for silicon solidification. But CZ silicon melt flow is very complicated and this defect can be erased by the numerical analysis of the melt flow. In this paper, the optimum solidification conditions were shown for crucible rotation. This is because the solidification conditions depend on crucible rotation under the cooling process and the solidification conditions were investigated on heat generation rate on crucible wall and rotation by using numerical analysis. For the numerical validations, we verified with experimental data and showed good agreement with current numerical results. The solidification regions are classified with crystal rotation and crucible rotation. For the heat generation rate, qw, the optimum heat generation rate was estimated for 20 W/cm2 and when crystal rotation and crucible rotation is 5 rpm, the maximum solidification length can be obtained and has a stable solidification.